Fig. 5: Hysteresis curves for domain walls (DW).
Resistivity of the 2DW and 4DW states. a Pinched hysteresis obtained from plotting the device current versus the change in voltage ΔV, in nanovolts. As we can see, the 2DW state has a larger change in voltage, which is of the order of 500 nV. b We plot the change in resistivity as a function of the current density, which is in units of 1011 A m−2. As we can see, the domain-wall states have a larger memristive effect that the ground state and the in-plane states.
