Table 1 Calculated binding energies of ground state \({E}_{1{{{{{\rm{s}}}}}}({{{{{{\rm{A}}}}}}}_{1})}\) and energies of excited \({E}_{1{{{{{\rm{s}}}}}}({{{{{{\rm{T}}}}}}}_{2})}\) and \({E}_{1{{{{{\rm{s}}}}}}({{{{{\rm{E}}}}}})}\) states using Perdew–Burke–Ernzerhof (PBE) and Heyd, Scuseria, and Ernzerhof (HSE) functionals.

From: Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach

 

n

\({E}_{1{{{{{\rm{s}}}}}}({{{{{{\rm{A}}}}}}}_{1})}\) (meV)

\({E}_{1{{{{{\rm{s}}}}}}({{{{{{\rm{T}}}}}}}_{2})}\) (meV)

\({E}_{1{{{{{\rm{s}}}}}}({{{{{\rm{E}}}}}})}\) (meV)

VASP

CP2K

VASP

CP2K

VASP

CP2K

PBE

2

398.98

416.03

138.78

136.20

108.29

105.35

3

189.10

203.49

88.08

96.22

69.76

75.14

4

93.21

98.62

56.26

59.14

49.06

51.31

5

64.05

67.71

44.06

45.52

40.36

41.45

6

50.21

52.76

36.96

37.42

34.74

34.87

7

44.18

31.95

30.10

8

39.25

27.99

26.42

HSE

2

620.85

605.58

152.53

156.11

128.97

119.14

3

277.27

271.86

95.05

94.43

84.54

77.88

4

134.92

131.16

64.60

62.52

58.12

55.17

5

88.17

86.93

51.17

48.24

47.57

44.34

Final prediction

 

46.07

43.03

37.22

30.34

35.87

29.24

Experiment33,34

 

45.59

33.88

32.54