Fig. 5: Normalised thickness dependent crossover of superconducting state behaviour.
AΔR (device area A, magnetoresistance ΔR) at T/Tdevice = 0.3 vs. dNb/ξS,d, where T is temperature and Tdevice is the onset temperature of the device transition, dNb is Nb thickness and ξS,d is dirty limit coherence length. The inset is the difference between superconducting critical temperatures in the parallel and antiparallel states, ΔTc, vs. dNb/ξS,d. Red points show quasiparticle giant magnetoresistance dominated behaviour, blue the superconducting spin valve effect dominated behavior. Points represent individual spin-valve devices. Vertical error bars are the measurement uncertainty in AΔR for each device and horizontal error bars the uncertainty in dNb. The crossover point between the two behaviours occurs around dNb = 2ξS,d.
