Fig. 2: Overview of an exemplary Flip-Chip device. | Communications Physics

Fig. 2: Overview of an exemplary Flip-Chip device.

From: Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Fig. 2

a Optical micrograph of an exemplary microwave circuit with a 650 μm-thick sapphire wafer substrate in c-plane orientation. All superconducting structures are made out of 50 nm-thick molecular beam epitaxy grown Nb, which has been patterned by means of dry etching. For the application of the microwave signal, a single λ/4 coplanar waveguide resonator is used, which is capacitively coupled (yellow square) to a short transmission line and an impedance-matched superconducting bonding pad. The electromagnetic tuning of the device is realized with a combination of an on-chip flux bias line and a large bonding pad that acts as the mechanical and electrical connection between the gate electrode on the device chip and the fridge wiring. b Scanning electron microscopy image of an in-situ formed InAs/Al nanowire Josephson junction on top of a single bottom gate electrode. The SQUID loop itself and the electrical contacts are made out of 80 nm-thick NbTi. c Optical micrograph of a flipped device. The image was taken through the sapphire substrate mounted upon a polymer stamp during alignment. The SQUID loop is aligned such that one side is located above the termination point of the resonator. To ensure a constant and homogeneous reference potential, the device is connected to a large bonding pad that is electrically coupled to the ground plane of the sapphire chip with a conducting epoxy.

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