Fig. 3: Carrier-envelope phase (CEP) dependence of reflective high harmonic generation (HHG) in silicon. | Communications Physics

Fig. 3: Carrier-envelope phase (CEP) dependence of reflective high harmonic generation (HHG) in silicon.

From: Role of Van Hove singularities and effective mass anisotropy in polarization-resolved high harmonic spectroscopy of silicon

Fig. 3

a Comparison of high harmonic spectra generated in crystalline silicon for linear polarization of the driving pulses along [100] direction for two values of CEP shifted by π. b CEP-dependent HHG spectra (color bar shows the spectral power density) with driving polarization along [100] direction. c, d Measured and e, f calculated HHG spectra for two directions of linear polarization of the driving pulse along c, e [100] and d, f [110] directions. The photon energy of the pulse was normalized in the time-dependent density functional theory (local density approximation) calculations to account for the underrated width of the band gap of \({E}_{{{{{{{{\rm{g}}}}}}}}}^{{{{{{{{\rm{LDA}}}}}}}}}=2.56\) eV. The color scale represents the relative difference between spectral power densities of the CEP-dependent and CEP-averaged high harmonic radiation.

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