Fig. 1: Device schematics.

a Cross section of Rashba nanowire epitaxially epitaxially coated with a superconductor (SC) and a magnetic-insulator (MI), showing overlapping SC and MI layers. b A 3-D schematic of the device setup with the nanowire connected to two normal contacts via tunnel barriers, and a gate to control chemical potential, μ. c, d Effective 1D models used for computation, treating MI-SC as a stacked bilayer, with the homogeneous and inhomogeneous chemical potential profiles shown below.