Fig. 5: Configuration of the tunnelling device.
From: A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
a Optical microscopy image of our device. The positions of the bottom and top graphene monolayers are indicated with blue and black dashed lines respectively. The intersection area of the graphene layers (area of the tunnelling device) is ~50 μm2, b is a schematic diagram showing the top GrT and bottom GrB graphene layers and the configuration of the applied gate, Vg,and bias Vb voltages. The few-layer graphene gate (FLG) is located between the SiO2 and thick hBN layer.
