Fig. 3: Diode effect in a long Dayem bridge.
From: Sign reversal diode effect in superconducting Dayem nanobridges
a Magnetic field dependence of the switching current for positive \({I}_{sw}^{+}\)(green dots) and negative \(| {I}_{sw}^{-}|\)(orange dots) bias current recorded at 50 mK. b ΔIsw obtained from panel a. The rectification efficiency increases linearly in Bz until ∣Bz∣ ≃ 015 T. Red and black dashed lines mark the magnetic field values corresponding to sign reversal (BR) and maximum rectification (Bmax), respectively. Inset: Blow-up of ΔIsw for large positive (black) and negative (brown) fields displaying several changes of signs. c IV characteristics with negative \({I}_{sw}^{+} < | {I}_{sw}^{-}|\) and positive \({I}_{sw}^{+} > | {I}_{sw}^{-}|\) rectification recorded at the magnetic fields marked by bars in panel a. d Color plot of the rectification efficiency as a function of temperature and magnetic field, η(Bz, T). Dashed lines are guides for the eye to highlight the different temperature trends in Bmax and BR. e Rectification parameters: ηmax ≡ (ηmax(Bz > 0) + ηmax(Bz < 0))/2 (green dots), field-to-rectification efficiency transfer function Γ (blue dots) (i), Bmax (red dots) and BR (black dots) magnetic fields (ii) versus normalized temperature. \({T}_{c}^{L}\) denotes the critical temperature of the long bridge. ηmax is the rectification value of the low-field peak at Bmax. f \({\eta }_{{B}_{z}}\) for selected bath temperatures marked by dashed lines in panel d. Curves are vertically offset for clarity.
