Fig. 2: Different ground states at ν = 2 for opposite D.
From: Abundant electric-field tunable symmetry-broken states in twisted monolayer-bilayer graphene
a–c Longitudinal resistance \({R}_{{xx}}\) as a function of carrier density n and electric displacement field D measured at \(T=100\,{{\mbox{mK}}}\) and \(B_{\perp}=6\,{{\mbox{T}}}\) (a), \(B_{\perp}=10\,{{\mbox{T}}}\) (b), B|| = 12 T (c). Peaks at filling factor ν = 2 are visible. d \({R}_{{xx}}\) measured as a function of n at various parallel magnetic field from 2 T to 12 T at D = 0.5 V/nm. The inset plots Rxx(B||) (blue points) extracted at ν = 2 and the left axis is log scale. The red arrow shows the critical magnetic field of gapped state (highlighted in green region).
