Fig. 6: SOT-driven magnetization switching. | Communications Physics

Fig. 6: SOT-driven magnetization switching.

From: Enhanced spin-orbit torque by interfacial Rashba-Edelstein effect in an all-oxide epitaxial heterostructure

Fig. 6

a Schematic of an eight-terminal M-switching device. A small read current is applied along [100], and the Hall resistance is read along [010]. The write pulse currents IPulse-I and IPulse-II are applied along the [110] and [\(\bar{1}\)10], respectively. b Rxy as a function of write current pulses in SIO/NiO (2)/LSMO with different Hext along [100]. 3.5 mT is close to the coercivity, and 50 mT exceeds the saturated field. c Rxy of SIO/NiO (2)/LSMO as a function of IPulse-I and IPulse-II. The IPulse-I stabilizes Rxy to −0.048 Ω while IPulse-II stabilizes Rxy to 0.048 Ω. d The stability of SOT-driven M switching of SIO/NiO (2)/LSMO in 20 consecutive sets of operations. e The switching ratio (the change in Rxy to the change in RPHE: ∆Rxy/∆RPHE) as a function of current density (SIO layer) in SIO/LSMO and SIO/NiO (2)/LSMO heterostructures. f tNiO-dependent critical switching current in SIO/NiO (t)/LSMO.

Back to article page