Fig. 1: Quantum interference oscillations (QIOs) in pressurised UTe₂.

a QIOs in the contactless resistivity for H∥a measured by the change in resonant frequency of a tunnel diode oscillator (TDO) circuit, Δf_TDO, at various pressures as indicated. Oscillations have been rescaled to be visible on the same scale. b Raw contactless resistivity at 0 kbar and 19.5 kbar translated to have the same value at 15 T. The absolute amplitude of the oscillations substantially diminishes from 0.0 kbar to 19.5 kbar. c Fast Fourier transforms (FFTs) of the QIOs at each measured pressure point taken over a 17–34 T window except the data at 17 kbar where the FFT is taken from 18.5 to 28 T. d QIO frequency plotted versus pressure, showing a smooth increase in frequency with compression. The right-hand axis gives the FS warping percentage corresponding to increased QIO frequency. e Side-view of the UTe₂ Fermi surface cylinders (adapted from ref. ³⁶). The [100] direction (crystallographic a-axis) is oriented into the page. The red shaded area corresponds to the enclosed k-space area, between the Fermi surface cylinders (hole cylinder in orange, electron in blue), which yields a QIO frequency of  ≈220 T.