Fig. 3: Energy-dispersion of the local density of states variance.
From: Anderson transition symmetries at the band-edge of a correlated Sn/Si monolayer
a Mean normalized dI/dV spectrum \({\langle {\eta }_{\Lambda }(E)\rangle }_{r}\) as a function of energy. The grey area denotes the standard deviation on the map. For E > − 0.45 eV, a large part of the grid’s pixels have negative dI/dV, corresponding to a dominance of noise in this highly insulating region. We shall therefore focus on the E < −0.45 eV region. b Lin-lin and lin-log plots of the normalized variance computed on an iso-energy LDOS map σ2 = 〈δρ2〉/〈ρ〉2. On c, we shift the origin of energies to the band edge and show that adding a magnetic field of 6.5 T slightly changes the scaling law. d Variance σ2(E) versus mean \({\langle {\eta }_{\Lambda }(E)\rangle }_{r}\) of normalized tunneling conductance. e Dimensionless conductance g(E) in the parabolic diffusive band model (g(E) = ℏρ(E)D(E)) as a function of energy, for different elastic scattering rates γel. The Thouless energy is set at ETh = 30μeV. f Comparison of the experimental σ2(E) with the weak-disorder model 1/4πg(E) for γel = {100, 150, 250} THz.
