Table 1 Performance comparison of different structural RRAM devices exhibiting negative-SET phenomenon
Stack | Forming voltage(V) | Set/Reset voltage(V) | Cycle number before negative-SET occurred | The mechanism of negative-SET occurred | References |
|---|---|---|---|---|---|
Ni/Ti/Al₂O₃/p⁺Si | 4.7 | 3.0/-2.5 | 32 cycles | Accumulation of oxygen vacancies | 11 |
Ti/TiO₂/Pt | 1.5 | 0.8/-0.4 | after a few switching cycles | Accumulation of oxygen vacancies | 12 |
Pt/HfOₓ/Pt | 5.1 | 0.7/-0.6 | 181 cycles | Accumulation of oxygen vacancies | 15 |
ITO/MER/Al | 1.7/-2.1 | Accumulation of Al ion | 9 | ||
Pt/SiNx/Ru | 0.85/-0.8 | after some switching cycles | Hydrogen ion diffusion | This Work |
