Table 2 The R-square values of the fitting process in Fig. 1e, f

From: Relationship between hydrogen diffusion and negative-SET occurred in resistive random access memory with inert electrode

Resistive state

NLRS

ULRS

Voltage

−0.2 V → −0.55 V

−0.35 V → −0.8 V

R-squared values

0.99756

0.99679

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