Fig. 3: Ferroelectric Characterization of Extra Hole-Doped (Sm, La, Eu) HfO₂ Thin Films Epitaxially Grown on SrRuO₃ Bottom Electrodes. | Communications Physics

Fig. 3: Ferroelectric Characterization of Extra Hole-Doped (Sm, La, Eu) HfO₂ Thin Films Epitaxially Grown on SrRuO₃ Bottom Electrodes.

From: Extra hole threshold in HfO2 ferroelectric phase stabilization

Fig. 3: Ferroelectric Characterization of Extra Hole-Doped (Sm, La, Eu) HfO₂ Thin Films Epitaxially Grown on SrRuO₃ Bottom Electrodes.

a–c Polarization-electric field (P-E) hysteresis loops for Sm-, La-, and Eu-doped systems under a doping concentration gradient of 0.0–10 at.%. The measurement frequency is 10 kHz. d Quantitative correlation between doping concentrations of extra hole-doped agents and remnant polarization (2Pᵣ), illustrating the structure-property relationship.

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