Fig. 4: Comparative study of Sm-doped HfO₂ ferroelectric thin films epitaxially grown on SRO(SrRuO3) and LSMO(La0.67Sr0.33MnO3) bottom electrodes.
From: Extra hole threshold in HfO2 ferroelectric phase stabilization
a, b Schematic illustrations of Sm-doped HfO₂ ferroelectric thin films grown on SRO and LSMO bottom electrodes; (c, d) XRD(X-ray Diffraction) patterns of films with varying Sm doping concentrations (0–10 at.%) on respective bottom electrodes. e, f The interfacial electrostatic potential distributions on the SrO-terminated SRO surface and the MnO₂-terminated LSMO surface, where the distance between the blue dashed lines represents the magnitude of the work function (the difference between the vacuum level and the Fermi level), and the orange dashed lines denote the corresponding interface work functions of HfO₂ films with distinct crystallographic orientations.
