Fig. 4: dI/dV mapping on K3P Lieb lattice containing three charge centers.
From: Atomic-scale electrostatic engineering of flat bands in a K3P Lieb lattice
a Scanning tunneling microscopy image (V = 100 mV, I = 0.1 nA) of a region containing three charge centers (CCs), labeled CC-1, CC-2, and CC-3. b–m Series of dI/dV maps acquired at different sample bias voltages. The field of view encompasses one CC (top-left) and excludes two additional CCs. White dashed lines trace the evolution of the dark contour features. The color bar codes for the dI/dV intensity (L: low, H: high). n Simulated equipotential contours generated by three point charges in vacuum. The red square marks the characteristic region corresponding to the experimental features. Scale bar: a 4 nm; b 1 nm.
