This is a preview of subscription content, access via your institution
Relevant articles
Open Access articles citing this article.
-
Electrically induced insulator-to-metal transition in InP-based ion-gated transistor
Scientific Reports Open Access 05 December 2024
-
Quantum point defects in 2D materials - the QPOD database
npj Computational Materials Open Access 04 April 2022
Access options
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$32.99 / 30 days
cancel any time
Subscribe to this journal
Receive 12 digital issues and online access to articles
$119.00 per year
only $9.92 per issue
Buy this article
- Purchase on SpringerLink
- Instant access to the full article PDF.
USD 39.95
Prices may be subject to local taxes which are calculated during checkout
Acknowledgements
I would like to thank Prof. Xiaolin Wang and Dr. Frank Fei Yun for valuable discussion. This article is partially supported by ARC Centre of Excellence in Future Low-Energy Electronics Technologies (CE170100039).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Competing interests
The author declares no competing interests.
Rights and permissions
About this article
Cite this article
Yue, Z. Ionic gating for ion intercalation. Nat Rev Phys 3, 306 (2021). https://doi.org/10.1038/s42254-021-00311-8
Published:
Version of record:
Issue date:
DOI: https://doi.org/10.1038/s42254-021-00311-8
This article is cited by
-
Electrically induced insulator-to-metal transition in InP-based ion-gated transistor
Scientific Reports (2024)
-
Quantum point defects in 2D materials - the QPOD database
npj Computational Materials (2022)