Fig. 3: Processing-dependent stoichiometry and oxygen vacancies in ultrathin TiOx.
From: Large mobility modulation in ultrathin amorphous titanium oxide transistors
High-resolution XPS spectra of Ti 2p (top row) and O 1s (bottom row) of ultrathin TiOx film annealed in: a, c forming gas (4% H2/Ar); b, d TiOx film annealed in O2.
