Fig. 5: EELS measurements on the structure with holes at different distances from the edge.
From: Interaction of edge exciton polaritons with engineered defects in the hyperbolic material Bi2Se3
a Schematic of the defect structure with the investigated area being marked by a red frame and slices of the 3D-data cube at the indicated energy-loss values (1, 1.5, 3, and 4 eV). The color scale indicates the relative local absorption probability at the displayed energy-loss. (b, c) Experimental and (d, e) simulated EELS intensities acquired along a Bi2Se3 nanoplatelet having holes at different distances from the edge. The exact shape of the structure was extracted from the bright-field TEM image and used for the simulations. Line profiles at selected energies (i) 1 eV, (ii) 1.5 eV, (iii) 2 eV (iv) 3 eV, (v) 4 eV are shown in (c) and (e).
