Fig. 1: Sketch of the HM-based fabrication process and pre-characterization. | Communications Materials

Fig. 1: Sketch of the HM-based fabrication process and pre-characterization.

From: Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction

Fig. 1

a Sketch of the micro-fabrication process described in the “Methods” section, based on the use of lithography-defined hydrogen masks (HM) and H-ions irradiation: after removal of the mask a triangular GaAs1−yNy microstructure is left in the epilayer, surrounded by hydrogenated GaAs1−yNy regions of larger out-of-plane lattice parameter. b Scanning electron microscopy (SEM) image of the HM used in the process (an equilateral triangle of ~5 µm side), prior to mask removal. c Micro-Raman color intensity map of the triangular GaAs0.991N0.009 object fabricated as sketched in a.

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