Fig. 2: Response mechanism and performance of the Sb2Te3 photodetector in the VIS and IR bands.
From: Bandgap-independent photoconductive detection in two-dimensional Sb2Te3
a Schematic of the structure and response mechanism under VIS and IR radiation. b Photocurrent of the photodetector at 635 nm and 1550 nm with different bias voltages. c Photocurrent and responsivity of the photodetector as a function of powers with a bias voltage of 0.2 V. d Response speed at 635 nm radiation. The inset: the oscillogram under periodic 635 nm radiation.
