Fig. 3: Observation of flat and weakly dispersing bands.
From: Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8
a, b ARPES measured band dispersions along \(\overline{{{{{{{{\rm{M}}}}}}}}}-\overline{{{\Gamma }}}-\overline{{{{{{{{\rm{M}}}}}}}}}\) measured using photon energy of 90 eV and Integrated EDC (Voigt fit, also see Supplementary Note 6 and Supplementary Fig. 9) within a momentum window of (−0.4/Å–0/Å) in (a). c, d Second derivative plot of dispersion map in a and respective EDC curve taken within momentum window of (−0.5/Å–0/Å), respectively. e Experimental band dispersion along \(\overline{{{{{{{{\rm{M}}}}}}}}}-\overline{{{\Gamma }}}-\overline{{{{{{{{\rm{M}}}}}}}}}\) direction. f Calculated bands along M−Γ−M. g Experimental band dispersion along the \(\overline{{{\Gamma }}}-\overline{{{{{{{{\rm{K}}}}}}}}}-\overline{{{{{{{{\rm{M}}}}}}}}}-\overline{{{{{{{{\rm{K}}}}}}}}}\) direction. h Calculated bands along Γ−K−M−K. ARPES data were collected at the ALS beamline 4.0.3 at a temperature of 260 K.
