Fig. 2: Efficient fabrication of GNR-based QD devices.
From: Scalable fabrication of graphene nanoribbon quantum dot devices with stable orbital-level spacing
a–c LNi dependence of a Yd, relative appearance rate of b CB, and c (red) CD and (blue) No-CD devices. d Plot of G/G0 vs. on/off ratio (room temperature) for CB (〇) and No-CB (×) devices. e, f Arrhenius plot of Gmin/G0 for e No-CB and f CB device. g Plot of RT for No-CB, single-like dot, and multi-dot devices. h Typical model of correlation between λPR and fine structure in GNR (i, state of Ni nanobar just before segregation of GNRs; ii, after segregation of GNRs from Ni nanobar with a BP at the nose point of the PR instability wave; iii, GNR with fine structure). i Typical (top)Ids and (bottom) dIds/dVds mapping as functions of Vg and Vds for a CD device. j (left) Low and (right) high magnification SEM images of the GNR device used for (i).
