Table 1 Temperature coefficients of Raman modes.

From: Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition

 

E2g

A1g

χ1

χ2

ω0

χ1

χ2

ω0

VD

−0.015 ± 0.019

3.4e–5 ± 2.9e–5

388.88 ± 1.12

−0.019 ± 0.01

4.08e–5 ± 2.5e–5

407.79 ± 0.99

SD

−0.0066 ± 0.011

1.6e–5 ± 2.78e–5

386.48 ± 1.06

−0.021 ± 0.01

4.41e–5 ± 2.5e–5

407.67 ± 0.93

  1. First- and second-order temperature coefficients along with the absolute zero Raman shift value for both the Raman modes before (VD) and after (SD) electrical stress are extracted from Fig. 6 using the polynomial equation discussed in Supplementary Note 4.
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