Fig. 11: Defect characterization at the c-Si/a-Si:H interface.
From: Hydrogen-induced degradation dynamics in silicon heterojunction solar cells via machine learning
IPR of atoms at the c-Si/a-Si:H interface and in aSi:H regions (a) before and (b) after a hydrogen atom is taken out of a dangling bond and placed at a Si–Si bond center.
