Fig. 2: Structure and electronic characteristics of GaN transducer.
From: Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%
a Schematic drawing of the PIN structure of GaN transducer. b Digital photograph of the front-view of GaN transducer array. c Forward I–V and d reverse C–V curves of GaN transducer at room temperature without irradiation.
