Table 1 Comparison of electrical characteristics of GaN AV cell with different EHe and Bi values.
From: Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%
EHe (MeV) | Aα (mCi cm−2) | VOC (V) | ISC (nA cm−2) | Pmax (nW cm−2) | PCE (%) | FF |
|---|---|---|---|---|---|---|
1.13 | 0.040 | 0.98 | 16.44 | 10.92 | 3.53 ± 0.44 | 0.68 |
0.102 | 1.05 | 41.20 | 30.00 | 3.83 ± 0.48 | 0.69 | |
0.196 | 1.13 | 86.80 | 67.91 | 4.51 ± 0.57 | 0.70 | |
1.85 | 0.098 | 1.05 | 46.58 | 29.88 | 2.58 ± 0.32 | 0.61 |
0.185 | 1.10 | 81.73 | 61.44 | 2.80 ± 0.35 | 0.68 | |
0.228 | 1.14 | 112.93 | 89.40 | 3.31 ± 0.42 | 0.69 | |
2.87 | 0.059 | 0.98 | 20.36 | 12.54 | 1.20 ± 0.15 | 0.63 |
0.105 | 1.05 | 44.62 | 31.62 | 1.69 ± 0.21 | 0.67 | |
0.218 | 1.11 | 92.84 | 67.38 | 1.74 ± 0.22 | 0.65 |
