Fig. 2: Energy band diagrams, energy-level shifts, and ΔV variations for a flat and a nanobubble region under various VG conditions.
From: Imaging Fermi-level hysteresis in nanoscale bubbles of few-layer MoS2
a Energy band diagrams of the cross-sections of a flat (left) and a nanobubble (right) region with a H2O dielectric layer of 4 nm, and oxide trap level alignments when VG = −35, −5, and 10 V. b Energy-level shifts of the upper band of oxide trap at dox = 2 nm for a flat (red) and a nanobubble (blue) region, as indicated by the arrows. c Experimentally measured (circles) and calculated (solid curves) ΔV as a function of the positive maximum gate voltage (VG,max) under VG sweeps for flat (red) and nanobubble (blue) regions. These outcomes are in good agreement, and the values increase even after EF is pinned near EC at VG,max = 2 V, as shown in Supplementary Fig. 7.
