Fig. 4: Uniaxially strained 2H-NbSe2.
From: Charge density waves and the effects of uniaxial strain on the electronic structure of 2H-NbSe2
a The FS of the 2H-NbSe2 sample when the tensile strain of about 0.6% is applied along the Γ − K line indicated by an arrow. b Sample on the strain device (top) and schematic of the change in the crystal structure of NbSe2 under uniaxial strain (bottom). c Close-ups of the regions near the two Γ − K lines marked as “1" (top) and “2" (middle) in (a). The same region for the relaxed sample is shown in the bottom panel. d Dispersion of states along the two Γ − K lines marked as “1" and “2" in (a), shown in middle and bottom panel, respectively. The two MDCs (symbols) at E = 0 and the corresponding fits (lines) are shown in the top panel. e The EDCs at the two vHS points at the lines (1) and (2). The strained and relaxed samples were measured at 14 and 18 K, respectively, using He I radiation.
