Fig. 3: Intensity and temperature dependence of dynamics of DASA on a NW chip.
From: Integrating molecular photoswitch memory with nanoscale optoelectronics for neuromorphic computing
a Photocurrent response of the NW solar cell at high light intensities around a wavelength of 650 nm as a function of time. Writing (inducing transparency in the DASA) is observed. The speed of the change in transmission depends on the light intensity. The photocurrent is normalized between the initial value and the endpoint of a fitted exponential decay function. As the operation of the III–V optoelectronic components can be controlled down to the nanosecond scale44, they can be regarded as operating instantaneously compared to the DASA. b Rate of transmission change (write rate) as a function of light intensity. c Photocurrent under low illumination levels after the dye has been made transparent using high light intensity. Increasing the temperature leads to a significant decrease in DASA recovery time indicating a simple way to reset the memory system. d Recovery rate of the DASA as a function of temperature, shown in an Arrhenius plot. The fitted line corresponds to an energy barrier of 120 kJ mol−1 for the thermally activated back reaction in PAMS polymer films.
