Fig. 3: Materials characterisation using transmission electron microscopy. | Communications Materials

Fig. 3: Materials characterisation using transmission electron microscopy.

From: Enhanced non-volatile resistive switching performance through ion-assisted magnetron sputtering of TiN bottom electrodes

Fig. 3

Cross-sectional STEM and bright-field and dark-field TEM images of the Si(001)/a-SiO2/TiNx/BHO/W devices with TiNx bottom electrodes sputter-deposited at a–c Vs = −100 V and Ts = 400 °C, and d–f Vs = floating and Ts = no external substrate heating. For both cases, \({{{{\rm{P}}}}}_{{{{{\rm{N}}}}}_{2}}\) = 1 sccm.

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