Table 6 Examples of solutions with high HBE scores or low SBE scores but relatively high HBE scores for the problem of contact resistance in IGZO-TFTs

H01K

Implement a metal-catalyzed hydrogenation process where a thin catalytic metal layer, such as palladium, is deposited at the AOS-electrode interface. When exposed to a hydrogen-rich environment, the metal layer can dissociate molecular hydrogen into atomic hydrogen, which then diffuses into the contact area, reducing resistance. This method provides an efficient, single-step process to enhance the electrical properties of AOS TFTs, suitable for complex device architectures. The process aligns with IPC code H01K by offering a novel manufacturing technique that addresses the contact resistance challenge in next-generation storage technologies.

9

2

8

Placing a palladium thin film in contact with AOS replicates the original inspiration. However, the specific process has not been disclosed.

Pd

Utilize palladium in the development of a hybrid electrode structure that combines the benefits of Pd’s hydrogen absorption with other conductive materials. This hybrid structure can optimize the balance between conductivity and durability, providing a long-term solution to contact resistance issues in high-density DRAM technologies.

9

1

9

Placing a palladium thin film in contact with AOS replicates the original inspiration. While specific materials are not disclosed, the idea considers combining it with conductive materials to address the conductivity issues associated with palladium itself.

Pt

Create a dual-layer electrode structure with Pt as the bottom layer and a traditional conductive material on top. The Pt layer directly contacts the AOS, ensuring minimal contact resistance due to its high conductivity and stability. The top layer can be a more cost-effective material, reducing overall material costs while maintaining performance. This structure can be fabricated using sequential deposition techniques, ensuring compatibility with existing manufacturing technology while leveraging Pt’s benefits at the critical AOS interface.

3

0

7

In addition to hydrogen doping using Pt, an idea has been proposed to address the reduction of electrode resistance by laminating a low-resistivity metal with Pt. It has also been shown that the process can be efficiently carried out with continuous deposition along with Pt. However, while Pt exhibits hydrogen activation, its hydrogen storage and transport capabilities are low, leaving it unclear how hydrogen can be transported to the Pt electrode.

C22C

A noble metal-based alloy, specifically a platinum alloy (C22C 5/04), can be used to form a conductive interlayer between AOS and electrodes. Platinum alloys are renowned for their superior conductive properties and resistance to oxidation, which is critical in reducing contact resistance. The layer can be deposited using atomic layer deposition, a technique that ensures high precision and conformity, necessary for buried contacts in complex storage architectures. This approach not only addresses the resistance issue but also improves the overall reliability and performance of the storage device.

3

0

7

Using atomic layer deposition (ALD) as a process to apply Pt film to complex structures is a viable possibility. However, while Pt exhibits hydrogen activation properties, its hydrogen storage and transport capabilities are low, making it unclear how hydrogen can be effectively transported to the Pt electrode.