Fig. 3: Schematics of the experimental setup and evolution of transverse magnetoresistance (MR) with doping. | Communications Materials

Fig. 3: Schematics of the experimental setup and evolution of transverse magnetoresistance (MR) with doping.

From: Enhancing magnetoresistance and mobility in Co3+xSn2-xS2 via non-stoichiometric doping for fermi level engineering

Fig. 3

(a) The schematics of the experimental setup for transverse MR and Hall measurements, where a magnetic field was applied along the c-axis (B//c) while the current was directed within the ab-plane (I//ab). b–e The large MR without any sign of saturation up to 9 T at low temperatures is depicted for some representative samples x = 0,0.1, 0.27, and 0.3, respectively. The MR is increased with increasing doping and achieves as large as 1150 % for the x = 0.27 sample.

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