Fig. 5: Analysis of Hall resistivity (ρxy(B)) data.

(a) Hall resistivity for all samples at 2 K. A systematic evolution of non-linearity can be seen as doping increases, indicating the fine-tuning of the Fermi level. b The zoomed figure of (a) for a small field range shows the evolution of Hall hysteresis (anomalous Hall effect) with doping at 2 K. c The schematic of Fermi level tuning due to electron doping. The solid line is the Fermi level for the pristine, and the dashed line is after the electron doping. The red shaded part is the hole band, and the blue shaded part is the electron band after doping. We have used a two-band model to fit these Hall resistivities to get carrier concentrations and mobility for holes and electrons as fitting parameters [for more details, see Supplementary Fig 3]. d Carrier concentrations for holes and electrons as a function of doping (x). With doping, the hole carriers are suppressed, and the crossover of holes and electrons occurs around x = 0.23– 0.27. e Hole and electron mobilities as a function of x. Both the mobilities increase with doping, where electron mobilities dominate over the hole mobilities and reach as high as 18,000 cm²V⁻¹s⁻¹ for x = 0.27. f Comparison of MR and mobility at 2 K under 9 T among different magnetic (orange oval) and non-magnetic (violet oval) topological materials. Our sample shows the highest MR and mobility values ever observed among magnetic topological materials.