Fig. 1: Surface morphology and crystal phase as a function of ΦSe/Ga and Tsub. | Communications Materials

Fig. 1: Surface morphology and crystal phase as a function of ΦSe/Ga and Tsub.

From: Unveiling the growth mode diagram of GaSe on sapphire

Fig. 1

a SEM images showing the surface morphology of gallium selenide films grown at varying ΦSe/Ga (rows) and Tsub (columns), with selected RHEED patterns (inset) acquired perpendicular to the [10.0] direction. Scale bar: 2 μm. Crosses mark the positions where Raman measurements were performed. b, c EDX spectra confirming the elemental composition of clusters on samples grown at ΦSe/Ga of 7 (b) and 50 (c). The red lines are Gaussian fits to the experimental data. d Raman spectra from the marked regions in (a), identifying the predominant material phases (GaSe, Ga2Se3) under different growth conditions. Spectra are color-coded by growth temperature (cyan to magenta for low to high temperatures, as indicated in (a)). The Raman peaks were identified according to literature values29,30,31.

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