Fig. 1: Proposal of the SSR method through elucidation of device fatigue mechanisms.
a Schematic illustration of the AFE TiN/HZO/TiN capacitors. b VO-coupled fatigue mechanisms in ZrO2-based AFE capacitors. c Schematic diagram of the endurance enhancement in half-loop operated AFE devices via the recovery method. Development of predictable SSR method under (d) shallow and (e) deep fatigue situations in ZrO2-based AFE capacitors by decoupling VO charge trapping. Left panels are fatigue processes, and the right panels are recovery processes. The Q−V curves of initial states are illustrated by black dashed lines. f Application of SSR method in high endurance logic-compatible AFeRAM utilizing half-loop operation with low operating voltage.
