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Emerging memory electronics for non-volatile radiofrequency switching technologies

Nature Reviews Electrical Engineering volume 1, pages 10–23 (2024) Cite this article

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Abstract

Radiofrequency (RF) switches are pervasive in modern communication and connectivity systems such as cellular networks, satellite communications and radar systems. Contemporary systems typically use transistor RF switches; however, owing to the growing demand for devices with high speeds, reliability and energy efficiency, research into alternative materials and devices, particularly those based on non-volatile switching physics, is expanding. In this Review, we discuss recent advances in RF switches based on emerging and two-dimensional (2D) materials. Following an overview of RF switches based on emerging memory technology, such as random-access memory, conductive-bridge random-access memory and phase-change memory, we describe 2D non-volatile RF switch technologies, including device fabrication, high-frequency performance, switching time, power handling, electromagnetic and thermal studies. We then highlight integration of silicon complementary metal–oxide–semiconductors with various switch applications in connectivity circuits. Finally, we outline possible directions for future research such as sixth-generation (6G) networks with low latency and high bandwidth for augmented reality and virtual reality.

Key points

  • An RF switch is a device that controls radiofrequency signals, allowing multiple signals to be selected or connecting or disconnecting a signal from a circuit.

  • High-performance RF switches can provide reconfigurability in RF front-end systems, which increases design flexibility and reduces costs.

  • Unlike conventional RF switches, non-volatile RF switches can operate without an external static power supply because of their non-volatile resistive switching (NVRS) effect.

  • NVRS 2D RF switches are promising candidates that can play a key role in next-generation data communication technologies such as 6G and satellite communications, which are expected to offer considerably higher speeds, lower latency and energy efficiency.

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Fig. 1: A 3D integrated radiofrequency (RF) front end and a lumped model of RF switches.
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Fig. 2: Illustration and performance comparison of various radiofrequency switch technologies.
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Fig. 3: Structures and characteristics of phase-change-memory-based radiofrequency switches.
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Fig. 4: Structures and characteristics of 2D radiofrequency switches.
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Fig. 5: Multiple-input and multiple-output, retention, scaling and thermal properties of 2D radiofrequency switches.
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Fig. 6: Data communication properties of 2D radiofrequency switches.
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Fig. 7: Examples of system-level applications of radiofrequency switches.
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Acknowledgements

D.A. acknowledges the AirForce Research Laboratory award FA9550-21-1-0460, the Office of Naval Research grant N00014-20-1-2104, and the Cockrell Family Regents Chair Endowment. M.K. acknowledges the Ministry of Science and ICT (MSIT) funds (NRF-2022R1F1A107468112, NRF-2022R1A4A1033247, IITP-2023-RS-2022-00156361) and UNIST research project funds (1.210140.01).

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  1. These authors contributed equally: Dahyeon Kim, Sung Jin Yang.

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea

    Dahyeon Kim & Myungsoo Kim

  2. Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA

    Sung Jin Yang & Deji Akinwande

  3. Technion, Israel Institute of Technology, Haifa, Israel

    Nicolás Wainstein & Eilam Yalon

  4. Intel Corporation, Haifa, Israel

    Nicolás Wainstein

  5. IEMN, University of Lille, CNRS UMR8520, Villeneuve d’Ascq, France

    Simon Skrzypczak, Guillaume Ducournau, Emiliano Pallecchi & Henri Happy

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Contributions

D.K. and S.J.Y. contributed equally to this paper. D.K., S.J.Y., N.W., S.S., G.D., E.P., H.H., M.K. and D.A. researched data for the Review. D.K., E.Y., M.K. and D.A. contributed substantially to discussion of the content. D.K., S.J.Y., M.K. and D.A. wrote the article. M.K. and D.A. reviewed and/or edited the manuscript before submission.

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Correspondence to Myungsoo Kim or Deji Akinwande.

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Kim, D., Yang, S.J., Wainstein, N. et al. Emerging memory electronics for non-volatile radiofrequency switching technologies. Nat Rev Electr Eng 1, 10–23 (2024). https://doi.org/10.1038/s44287-023-00001-w

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