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Setting a standard for benchmarking 2D transistors with silicon

Nature Reviews Electrical Engineering volume 1, pages 629–631 (2024)Cite this article

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2D materials hold great promise for logic scaling beyond the limit of silicon MOSFET. However, in the absence of widely accepted guidelines for the performance comparison of the two technologies, it is essential to set proper standards to benchmark 2D transistors against silicon transistors.

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Fig. 1: Benchmarking 2D transistors against silicon counterparts.

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Authors and Affiliations

  1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China

    Peng Wu, Jianfeng Jiang & Lian-Mao Peng

  2. Research Laboratory of Electronics and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA

    Peng Wu & Jianfeng Jiang

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  1. Peng Wu
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  2. Jianfeng Jiang
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  3. Lian-Mao Peng
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Correspondence to Lian-Mao Peng.

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Wu, P., Jiang, J. & Peng, LM. Setting a standard for benchmarking 2D transistors with silicon. Nat Rev Electr Eng 1, 629–631 (2024). https://doi.org/10.1038/s44287-024-00093-y

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