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  • Perspective
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Low-dimensional low-symmetric semiconductors for polarization-sensitive photodetection

Nature Reviews Electrical Engineering volume 2, pages 480–493 (2025)Cite this article

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Abstract

Optoelectronics has evolved from fundamental materials to multifunctional integrated systems, yet photon manipulation remains in its early stages. Low-dimensional low-symmetric (LDLS) semiconductors, with atomic thickness and structural anisotropy, enable multidimensional photodetection, including the intensity, wavelength and polarization. Despite success for on-chip integration, challenges in large-scale, high-quality material synthesis and array construction hinder their application in high-resolution focal-plane imaging. In this Perspective, we examine the development of LDLS semiconductors for polarization-sensitive photodetection, outlining the physics of their anisotropic photoresponse. We then discuss key obstacles to large-scale integration in optoelectronic circuits and explore potential solutions. Finally, we highlight research directions to advance the on-chip integration of low-dimensional optoelectronics.

Key points

  • Low-dimensional low-symmetric (LDLS) semiconductors provide prospective solutions for next-generation lens-free polarization-sensitive photodetection.

  • The anisotropic photoresponse of LDLS semiconductors can be attributed to anisotropic light absorption or anisotropic spontaneous polarization photocurrent.

  • Significant progress has been made in the exploration of LDLS materials and the construction of polarization-sensitive photodetectors, showing a development trend from individual devices to multifunctional and large-scale arrays.

  • The current bottleneck of LDLS materials in the application of focal-plane polarization imaging comes from the preparation of large-scale single-crystal films, which is mainly caused by their low-symmetric crystal structure.

  • LDLS materials show considerable application potential in polarization imaging, polarization-coded optical communication, polarization optoelectrical computing and polarization navigation.

  • Development towards the circuit and system level requires the wafer-scale preparation of LDLS materials, the multifunctional modularization of device design and process compatibility with traditional optoelectronic materials.

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Fig. 1: LDLS semiconductors for linearly polarization-sensitive photodetection.
Fig. 2: Road map of routes in LDLS material-based photodetectors.
Fig. 3: Schematic of polarization imaging with back-end processing.
Fig. 4: Future development directions of LDLS semiconductors with five levels from the physical level to the circuit and system level.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (grants 62125404, U24A20285, 62375256), National Key Research and Development Program of China (grant 2024YFA1409700), Beijing Natural Science Foundation (Z220005) and CAS Project for Young Scientists in Basic Research (YSBR-056). The authors thank P. Zhou and J. Wang for discussions.

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Authors and Affiliations

  1. State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Kaiyao Xin, Ziqi Zhou, Siqi Qiu, Tingwei Liu, Yali Yu, Juehan Yang & Zhongming Wei

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Kaiyao Xin, Ziqi Zhou, Siqi Qiu, Tingwei Liu, Yali Yu, Juehan Yang & Zhongming Wei

  3. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

    Weida Hu

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Contributions

Z.W. supervised the project and review/editing the manuscript before submission. K.X. researched data for the article and contributed to writing the manuscript and the discussion of content. Z.Z., S.Q. and T.L. researched data for the article and contributed to discussion of content and writing. Y.Y., J.Y. and W.H. contributed to discussion of the content and reviewed the manuscript before submission.

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Correspondence to Zhongming Wei.

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Glossary

Black phosphorus

(BP). A layered two-dimensional semiconductor with a puckered structure and strong anisotropic electrical/optical properties.

Bulk photovoltaic effect

(BPVE). A unique phenomenon where homogeneous materials generate voltage under illumination without requiring a p–n junction.

Carbon nanotubes

(CNTs). Cylindrical nanostructures of carbon atoms in a hexagonal lattice.

Chemical vapour deposition

(CVD). A synthesis technique depositing high-quality thin films or nanostructures via gas-phase reactions on substrates.

Chemical vapour transport

(CVT). A vapor-phase crystal growth method using volatile agents to transport and deposit pure materials with high crystallinity.

Low-dimensional low-symmetric

(LDLS). Size shows nanometre-scale in at least one spatial dimension while structure exhibits a symmetry lower than three-fold rotational symmetry at a certain observation perspective.

Molecular beam epitaxy

(MBE). An atomic-precision preparation technique for material growth in ultra-high vacuum.

Physical vapour deposition

(PVD). A thin-film deposition technique via gas-phase without chemical process of atomic recombination.

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Xin, K., Zhou, Z., Qiu, S. et al. Low-dimensional low-symmetric semiconductors for polarization-sensitive photodetection. Nat Rev Electr Eng 2, 480–493 (2025). https://doi.org/10.1038/s44287-025-00183-5

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