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The Achilles’ heel of memristive technologies

Nature Reviews Electrical Engineering volume 2, pages 654–656 (2025) Cite this article

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The endurance, retention and system-level performance of memristors for memory and computation has been often misrepresented in articles that lack statistics and use non-standardized characterization and simulation protocols. Here we discuss the origin of these issues, their negative effect in the nascent memristor industry, and potential ways to mitigate them.

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Fig. 1: Endurance and retention claims reported in research articles.
The alternative text for this image may have been generated using AI.

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Author notes

  1. These authors contributed equally: Mario Lanza, Sebastian Pazos.

Authors and Affiliations

  1. Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore

    Mario Lanza & Sebastian Pazos

  2. Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore

    Mario Lanza

  3. Electronics Engineering Department, Universidad Tecnológica Nacional (UTN), Buenos Aires, Argentina

    Sebastian Pazos

  4. Intrinsic Semiconductor Technologies, Buckinghamshire, UK

    Fernando Aguirre

Authors
  1. Mario Lanza
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  2. Sebastian Pazos
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  3. Fernando Aguirre
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Corresponding author

Correspondence to Mario Lanza.

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Competing interests

F.A. is an employee of Intrinsic Semiconductor, which is seeking to commercialize memristors.

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Joint Electron Device Engineering Council: https://www.jedec.org/

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Lanza, M., Pazos, S. & Aguirre, F. The Achilles’ heel of memristive technologies. Nat Rev Electr Eng 2, 654–656 (2025). https://doi.org/10.1038/s44287-025-00207-0

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  • DOI: https://doi.org/10.1038/s44287-025-00207-0

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