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  • Perspective
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The rise of hydrogel transistors

Abstract

Solid-state silicon transistors have profoundly transformed modern life by enabling a wide array of electronic technologies. The rise of bioelectronics has emphasized the necessity for interfacing transistors with living systems. However, challenges such as mechanical incompatibility, disparities in charge carrier types and differences in form factors present significant barriers to seamless integration. Recent advances in hydrogels have led to the development of hydrogel transistors, which merge the unique properties of hydrogels with transistor functionality, offering a solution to overcome these mismatches. This Perspective highlights hydrogel transistors, their biomimetic features and methods for their fabrication and characterization. We envision how hydrogel transistors, by evolving from conventional 2D thin-film electronics to 3D gel electronics, expand the device toolbox, enabling next-generation 3D, programmable and living bioelectronics.

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Fig. 1: Hydrogel transistors provide exclusive opportunities to fill gaps between transistors and living systems.
Fig. 2: Hydrogel tra nsistors and circuits for practical bioelectronic applications.
Fig. 3: Material strategies towards hydrogel transistors and tissue-like properties.
Fig. 4: Characterization of hydrogel transistors.

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Acknowledgements

S.Z. acknowledges the Collaborative Research Fund (C7005-23Y), the Early Career Scheme (ECS) (27214224), the General Research Fund (GRF) (17208623, 17200425) and the Theme-based Research Scheme (T45-701/22-R) from the Research Grants Council of the Hong Kong SAR Government.

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S.Z. conceived this Perspective, acquired funding and supervised the work. S.Z., G.G.M., B.L., H.H., X.C., J.B. and D.L. contributed to the discussion of content. S.Z. and H.H. drafted the manuscript. All authors contributed to the Perspective and revision of the manuscript prior to submission.

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Correspondence to Shiming Zhang.

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Huang, H., Chen, X., Bai, J. et al. The rise of hydrogel transistors. Nat Rev Electr Eng 3, 61–73 (2026). https://doi.org/10.1038/s44287-025-00231-0

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