Fig. 1: Concept of single-digit nanometer MTJs for various applications.
From: Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities
a Stack structure of studied MTJ with schematic illustration of design principle. b–d TEM images of studied MTJs for (b) DBL(15) (ref. 33), (c) QUAD(5), and (d) OCTA(2). The white line in Fig. 1b, 1c, and 1d is a 10 nm scale bar. e Summary of coercive field μ0HC for studied MTJs. f R-H curve for OCTA(2) with D = 2.0 nm. TEM image of DBL(15) in (b) is reproduced from ref. 33. Copyright 2018 Author(s), licensed under a CC BY license. A part of data in (e) is reproduced with permission from ref. 35. Copyright 2020 IEEE; ref. 40. Copyright 2021 IEEE.
