Fig. 3: STT switching measurement for SGL(15) with D = 8.5 nm and HEXA(2) with D = 4.5 nm.

MTJ resistance R as a function of V: (a) for SGL(15) with D = 8.5 nm and (b) for HEXA(2) with D = 4.5 nm. Insets in (a) and (b) show R-H curves for the MTJ devices. c V_C with respect to pulse duration for different structures. Curves correspond to fitting curves using Eq. (3). d, e V_C for P to AP and AP to P switching (V_{C_P} and V_{C_AP}, respectively) normalized by that at 1 μs, respectively. Curves are normalized fitting curves obtained from (c). A part of data in (c), (d), and (e) is reproduced with permission from ref. ⁴⁰. Copyright 2021 IEEE.