Fig. 4: Summarized τD as a function of μ0HKeff for each structure.
From: Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities
Curve corresponds to Fitting using Eq. (5). The error bar shows the longest and shortest differences between both τD (for P to AP switching and AP-to-P switching), including standard errors, obtained by fitting using Eq. (3). Samples with shape (interfacial) anisotropy enhanced are indicated as red (blue) symbols.
