Fig. 9: Neuromorphic system simulations.

a Synaptic device design 1024 × 124 nm2 SOT writing and AHE reading. b Anomalous Hall resistance as a function of the normalized magnetization (c) synaptic potentiation and depression show highly linear behavior. d Crossbar circuit representation shows the proposed device’s integration in the neuromorphic network. e 3-Layer fully connected neural network based on the proposed device. f Accuracy results achieved on MNIST data classification benchmarked with the ideal weights.