Fig. 10: Different types of MTJ configurations.
A (i) Spin valve structure depiction. (ii) A representative R-H curve of a TMR sensor. B (i) Stack design for an MTJ device with linearity due to shape anisotropy. (ii) A close-up optical image of MTJ sensor elements showing the elliptical geometry used for achieving the shape anisotropy. C MTJ stack design with weakly pinned sensing layer for achieving hysteresis-free and linear R-H response curve. B (i) is originally plotted by the authors based on the MTJ stack design described in ref. 109. B (ii) Reprinted with permission from ref. 109, copyright 2008 AIP Publishing. C is originally plotted by the authors based on the MTJ stack design described in ref. 118.
