Fig. 2: Schematic of the two-channel model.

A when both FM layers magnetized in the same direction: (i) spin-dependent scattering, (ii) the schematics of DOS for the concerning magnetizations of the FM layers, whereas \({{\rm{E}}}_{{\rm{F}}}\) is the Fermi level, N(E) is DOS, and E is electron energy, (iii) resistor model schematics where the high resistance is \({{\rm{R}}}_{{\rm{H}}}\) and low resistance is \({{\rm{R}}}_{{\rm{L}}}\). Similarly, in (B) when the FM layers are magnetized into antiparallel directions, (i) spin-dependent scattering, (ii) schematic for DOS, and (iii) schematic of resistor model, respectively.