Fig. 3: Reconfigurable strain engineering.
From: Recent progress on controlling spin-orbit torques by materials design
a–c Pt/piezoelectric124: a Geometry of CoFeB/Pt/PMN-PT(011) device. b Resonance field HFMR as a function of in-plane magnetic field angle for different applied electric (c) spin Hall angle of CoFeB/Pt/PMN-PT device. d–f Pt/Co bilayer system125: d Schematic illustration of a Pt/Co bilayer for the ST-FMR measurement. e Schematic of strain application onto the sample. f Spin Hall efficiency as a function of in situ tensile strain. g, h W/piezoelectric126: g Schematic of the Ta/MgO/CoFeB/W/PMN-PT(011) Hall bar (h) FL and DL SOT effective fields under compressive (left) or tensile (right) strain.
