Fig. 6: Asymmetric device design.
From: Recent progress on controlling spin-orbit torques by materials design
a–c Ta/CoFeB/TaOx(wedge)39: a Schematic of generating oop effective field \({{\boldsymbol{H}}}_{{\boldsymbol{z}}}^{{\boldsymbol{FL}}}\). Current-induced switching with current along one (b) and the opposition c thickness-gradient direction. d–f Ta/CoFeB(wedge)/MgO138: d Schematic of the heterostructure. e Anomalous Hall resistance. f Current-induced switching. g–i Lateral magnetic gradient142: g saturation magnetization Ms or h magnetic anisotropy field Hk. i Magnetization switching with charge current. j–k Vertical composition gradient in CoxTb1-x139: j Schematic of vertical composition distribution of the CoxTb1-x film. k Current-induced perpendicular magnetization switching. l Cu–Pt143: Schematic of Cu–Pt/Pt/Co/Ni heterostructure with lateral composition gradient in Cu–Pt layer.
